작성일 : 12-12-11 19:04
Neutron-Induced Soft Errors for advanced DRAM
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Neutron-Induced Soft Errors for advanced DRAM
 
Test Site  : The Svedberg Laboratory (TSL), Uppsala University, Sweden
 
Date : December 3-5, 2012
 
Sample : DRAM
 
The DRAM devices were exposed to atmospheric-like spectrum of a neutron beam of up to 180 MeV at TSL.
 
The tests were performed under different test conditions such as data background variations.
 
The vendor name and more detailed information have been omitted for confidentiality.
 
 





 
 

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16 알키미스트 아이디어 공모전 최우수상 수상 webmaster 12-16 3583
15 Paper accepted to IEEE International Reliability Physics Symposium (IRPS) 2015 webmaster 01-11 10241
14 Accepted for publication in IEEE Trans. on Nucl. Sci. webmaster 01-10 5615
13 Internship Technology Graduation Cross Functional @ Cisco Systems, Inc. webmaster 10-27 5531
12 BK21+ 사업에 선정되었습니다. webmaster 08-19 6961
11 Summer Internship @ Cisco Systems, Inc. webmaster 08-19 5522
10 Accepted for publication in IEEE Trans. on Computers webmaster 04-04 5134
9 Accepted for publication in IEEE Trans. on Nuclear Science webmaster 02-14 5170
8 Member update webmaster 12-31 5470
7 Neutron-Induced Soft Errors for advanced DRAM webmaster 12-11 5353
6 Update the link of three papers webmaster 10-24 5496
5 Paper accepted to RADECS 2012 webmaster 09-18 5318
4 Paper accepted to IJET (International Journal of Engineering and Technology) webmaster 09-05 4957
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