Title :
Memory Reliability Analysis for Multiple Block Effect of Soft Errors |
Authors :
Soonyoung Lee, Sanghoon Jeon, Sanghyeon Baeg, and Dongho Lee |
Appears in :
Accepted for publication in IEEE Trans. on Nuclear Science |
Abstract— Multiple
bit upsets
(MBU) are analyzed from the perspective of the number
of accessed blocks (NAB) in multiple memory block
structures. The
NAB represents the number of accessed blocks for a single memory operation. Statistical
model of the MBU with regards to the NAB is developed, and its correlation to the
test results presented. The tests were performed with neutron irradiation
facility at The Svedberg Laboratory. The NAB in structure of multiple memory
blocks is one of the most important parameter in determining the reliability of
the memory. Although multiple cell upsets can be effectively spread out as
multiple single bit upsets by interleaving distance scheme, the word failure
rates are increased by combination of multiple events from multiple memory
blocks. The proposed model can be effectively used for the estimation of the
mean time to the failure with different design parameters during the early
design states.
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