Authors : Sanghyeon Baeg, Soonyoung Lee, Geun Yong Bak, Hyunsoo Jeong, and Sang Hoon Jeon

 

 

 

 

 

  Single event upset (SEU) is mainly caused by the neutrons in terrestrial environment. In addition, SEU effects become more and more

 

problematic as technology scales. It is therefore important to understand the SEU behaviors of semiconductor devices under neutron

 

reactions. ANITA (Atmospheric-like Neutrons from thick Target) in TSL (The Svedberg Laboratory), Sweden resembles the neutron energy

 

and flux spectrum at the terrestrial level and is typically used to estimate soft error rate (SER). On the other hand, the neutron energy and

 

flux spectrum from MC-50 cyclotron in KIRAMS (Korea Institute of Radiological & Medical Sciences) differs greatly from the atmospheric

 

environment. The main objective of this work is finding the efficacy of neutron beam in KIRAMS for SEU analysis by comparative analysis;

 

55nm SRAM is used to determine SEU difference under the beams at the two different locations. Since MCU (Multi-Cell Upset) is the

 

dominant effect in emerging technologies with smaller critical charges, MCU cross-sections from the two different beam tests are compared.