작성일 : 13-01-14 16:10
publication 2013-01-14
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조회 : 17,078  
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4.
Author(s) :
Mirza Hussain Raza Qasim, Seong Young Jeon, Sung Hoon Chung, and Sanghyeon Baeg
 
Title :
Characterization of Si Charged Particles Detector by Measurement and  Analysis of its Dark Current
 
Submitted to :
Radiation Physics and Chemistry
 
Supporter(s) :
NRF (2020R1H1A2103043), KIAT and MOTIE (P0012451)
      

3.
Author(s) :
Nosheen Shahzadi, and Sanghyeon Baeg
 
Title :
Trap Energy Identification by Exploiting Trap Emission during n-MOSFET off Time via Manipulating Speed and Fall Time of Input Waveforms
 
Submitted to :
IEEE Transactions on Electron Devices
 
Supporter(s) :
NRF (2020R1H1A2103043), KIAT and MOTIE (P0012451)
     

2.
Author(s) :
Kiseok Lee, Jeonghwan Kim, and Sanghyeon Baeg
 
Title :
Benefit Quantifications of Random Memory Test Patterns by Fault Coverage Analysis
 
Submitted to :
IEEE Access
 
Supporter(s) :
KIAT (P0012451) and NRF(2020R1H1A2103043)

     
1.
Author(s) :
Junhyeong Kwon, Shi-Jie Wen, Rita Fung, Sanghyeon Baeg
 
Title :
Temperature Estimation of HBM2 Channels with Tail Distribution of Retention Errors in FPGA-HBM2 Platform
 
Submitted to :
Microelectronics Reliability
 
Supporter(s) :
NRF(2020R1H1A2103043), Cisco Systems Inc., and IDEC




International Journals

     
56.
Author(s) :
Nosheen Shahzadi, Myungsang Park, Donghyuk Yun, and Sanghyeon Baeg
 
Title :
 
Submitted to :
IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2338-2345, May. 2022, doi: 10.1109/TED.2022.3159496
 
Supporter(s) :
NRF (2020R1H1A2103043), KIAT and MOTIE (P0012451)

55.
Author(s) :
Sanghyeon Baeg, Donghyuk Yun, Myungsun Chun, and Shi-Jie Wen
 
Title :
 
Submitted to :
Transactions on Nuclear Sciencevol. 69, no. 3, pp. 558-566, Mar. 2022, doi: 10.1109/TNS.2022.3149487
 
Supporter(s) :
NRF (2020R1H1A2103043), KIAT and MOTIE (P0012451)

54.
Author(s) :
Donghyuk Yun, Myungsang Park, Geunyong Bak, Sanghyeon Baeg, and Shi-Jie Wen
 
Title :
 
Submitted to :
IEEE Access, vol. 9, pp. 137514-137523, Oct. 2021, doi: 10.1109/ACCESS.2021.3117601
 
Supporter(s) :
NRF (2020R1H1A2103043)
  
53.
Author(s) :
Kiseok Lee, Jeonghwan Kim, and Sanghyeon Baeg
 
Title :
Fault Coverage Re-Evaluation of Memory Test Algorithms With Physical Memory Characteristics
 
Submitted to :
IEEE Access, vol. 9, pp. 124632-124639, Sept. 2021, doi: 10.1109/ACCESS.2021.3110594
 
Supporter(s) :
NRF (2020R1H1A2103043), KIAT(P0012451)
   
52.
Author(s) :
Muhammad Waqar, Geunyong Bak, Junhyeong Kwon, and Sanghyeon Baeg
 
Title :
DDR4 BER Degradation Due to Crack in FBGA Package Solder Ball
 
Submitted to :
Electronics 2021; 10, no. 12: 1445.
 
Supporter(s) :
NRF (2020R1H1A2103043)

51.
Author(s) :
Muhammad Waqar, Geunyong Bak, Junhyeong Kwon, and Sanghyeon Baeg
 
Title :
DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package
 
Submitted to :
IEEE Access, vol. 9, pp. 63002-63011, Apr. 2021, doi: 10.1109/ACCESS.2021.3074595
 
Supporter(s) :
NRF (2020R1H1A2103043)

50.
Author(s) :
Mirza Hussain Raza Qasim, Nosheen Shahzadi, Geunyong Bak, and Sanhyeon Baeg
 
Title :
A theoretical and experimental investigation of Bragg's rule for energy-loss straggling in low mean energy loss regime in air and its constituents
 
Submitted to :
Vacuum, vol. 183, Jan. 2021
 
Supporter(s) :
NRF (2017R1A2B2002325), ICT & Future Planning (2017R1A2B2002325)

49.
Author(s) :
Muhammad Waqar, Sanghyeon Baeg, Geunyong Bak, Junhyeong Kwon, Kiseok Lee, and Sang Hoon Jeon
 
Title :
FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor
 
Submitted to :
Journal of Microelectronics Reliability, vol. 114, Nov. 2020, Art. no. 113916.
 
Supporter(s) :


48.
Author(s) :
Geunyong Bak and Sanghyeon Baeg
 
Title :
Failure Analysis of Galaxy S7 Edge Smartphone Using Neutron Radiation
 
Submitted to :
Transactions on Nuclear Sciencevol. 67, no. 11, pp. 2370-2381, Nov. 2020, doi: 10.1109/TNS.2020.3029786.
 
Supporter(s) :
MOTIE and KSRC (10052875) and NRF (2017R1A2B2002325)

47.
Author(s) :
Mirza Hussain Raza Qasim and Sanghyeon Baeg
 
Title :
Energy Straggling and an Experimental Investigation of Bragg's rule for 241Am alpha Particles in Air and its Constituents
 
Submitted to :
Radiation Physics and Chemistry, vol. 176, Nov. 2020
 
Supporter(s) :
NRF (2017R1A2B2002325), ICT & Future Planning (2017R1A2B2002325)

46.
Author(s) :
Sang Hoon Jeon, Chulseung Lim, Sanghyeon Baeg, ShiJie Wen, Habin Wang, and Li Chen
 
Title :
Radiation Reliability Benefit of Area-Optimized Interleaved Flip-Flop Layout in 28 nm Technology
 
Submitted to :
Journal of Microelectronics Reliability, Available online, Sep. 2019
 
Supporter(s) :
Cisco Systems Inc., NRF (2017R1A2B2002325) and MOTIE (10052875)

45.
Author(s) :
Sanghyeon Baeg, Mirza Qasim, Junhyeong Kwon, Tan Li, Nilay Gupta, Shi-Jie Wen, and Satyadev Kolli
 
Title :
Correctable and uncorrectable errors using large scale DRAM DIMMs in replacement network servers
 
Submitted to :
Journal of Microelectronics Reliability, vol. 99, pp. 104-112, Aug. 2019
 
Supporter(s) :
Cisco Systems Inc. and NRF (2017R1A2B2002325)

44.
Author(s) :
Ali Ahmed, Kyungbae Park, Saqib Ali Khan, Naeem Maroof, and Sanghyeon Baeg
 
Title :
Architectural Design Tradeoffs in SRAM-based TCAMs
 
Submitted to :
IEICE Electronics Express
 
Supporter(s) :

 
43.
Author(s) :
Tan Li, Hosung Lee, Geunyong Bak, and Sanghyeon Baeg
 
Title :
Failure Signature Analysis of Power-Opens in DDR3 SDRAMs
 
Submitted to :
Journal of Microelectronics Reliability, vol. 88-90, pp. 277-281, Sep. 2018
 
Supporter(s) :
MOTIE and KSRC (10052875) and NRF (2017R1A2B2002325)
 
42.
Author(s) :
Haibin Wang, Xixi Dai, Yangsheng Wang, Jinshun Bi, Bo Li, Gang Guo, Li Chen and Sanghyeon Baeg
 
Title :
A single event upset tolerant latch design
 
Submitted to :
Journal of Microelectronics Reliability, vol. 88-90, pp. 909-913, Sep. 2018
 
Supporter(s) :

 
41.
Author(s) :
Yuanqing Li, Li Chen, Issam Nofal, Mo Chen, Haibin Wang, Rui Liu, Qingyu Chen, Milos Krstic, Shuting Shi, Gang Guo, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
 
Title :
Modeling and analysis of single-event transient sensitivity of a 65nm clock tree
 
Submitted to :
Journal of Microelectronics Reliability, vol. 87, pp. 24-32, Aug. 2018
 
Supporter(s) :

 
40.
Author(s) :
Hosung Lee, Sanghyeon Baeg
 
Title :
Signal Characteristic and Test Exploitation for Intermittent Nanometer-scale Cracks
 
Submitted to :
Journal of Microelectronics Reliability, vol. 84, pp. 26-36, May. 2018
 
Supporter(s) :
MOTIE and KSRC (10052875) and NRF (2017R1A2B2002325)

39.
Author(s) :
Chulseung Lim, Kyungbae Park, Geunyong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
 
Title :
Study of Proton Radiation Effect to Row Hammer Fault in DDR4 SDRAMs
 
Submitted to :
Journal of Microelectronics Reliability, vol. 80, pp.85-90, Jan. 2018
 
Supporter(s) :
MOTIE and KSRC (10052875) and NRF (2017R1A2B2002325)
38.
Author(s) :
Y.-Q. Li, H.-B. Wang, R. Liu, L. Chen, I. Nofal, S.-T. Shi, A.-L He, G. Guo, S. H. Baeg, S.-J. Wen, R. Wong, M. Chen, and Q. Wu
 
Title :
A Quatro-Based 65 nm Flip-Flop Circuit for Soft-Error Resilience
 
Submitted to :
IEEE Trans. Nucl. Sci., vol. 64, no. 6, pp. 1554-1561, Jun. 2017
 
Supporter(s) :

37.
Author(s) :
Saqib Ali Khan, Chulseung Lim, Geunyong Bak, Sanghyeon Baeg, and Soonyoung Lee
 
Title :
 
Appears in :
Journal of Microelectronics Reliability, vol. 69, pp. 100-108, Feb. 2017
 
Supporter(s) :
전자정보디바이스산업원천기술개발사업
 
36.
Author(s) :
Ali Ahmed, Kyungbae Park, and Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Transaction of VLSI, vol. 25, no. 4, pp. 1583-1587, Apr. 2017
 
Supporter(s) :
전자정보디바이스산업원천기술개발사업
 
35.
Author(s) :
Hosung Lee, Sanghyeon Baeg, Nelson Hua, and ShiJie Wen
 
Title :
 
Appears in :
Journal of Microelectronics Reliability, vol. 69, pp. 88-99, Feb. 2017
 
Supporter(s) :
전자정보디바이스산업원천기술개발사업
 
34.
Author(s) :
Chulseung Lim, Kyungbae Park, and Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE trans on Nucl. Sci. vol. 64, no. 2, pp. 859-866, Feb. 2017
 
Supporter(s) :
IDEC, MPTIE(Ministry of Trade, Industry & Energy), KSRC(Korea Semiconductor Research Consortium)
 
33.
Author(s) :
Saqib Ali Khan, Shi-Jie Wen, and Sanghyeon Baeg
 
Title :
 
Appears in :
IEICE Electronics Express, vol. 13, no. 17, pp. 1-6 Sep. 2016
 
Supporter(s) :
전자정보디바이스산업원천기술개발사업
 
32.
Author(s) :
Kyungbae Park, Donghyuk Yun, and Sanghyeon Baeg
 
Title :
 
Appears in :
Journal of Microelectronics Reliability, vol. 67, pp. 143-149, Dec. 2016
 
Supporter(s) :
전자정보디바이스산업원천기술개발사업
 
31.
Author(s) :
H.-B. Wang, L. Chen, R. Liu, Y.-Q. Li, J. S. Kauppila, B. L. Bhuva, K. Lilja, S.-J. Wen, R. Wong, R. Fung, and Sanghyeon Baeg
 
Title :
An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 63, no. 3, pp. 3003-3009, Dec. 2016
 
Supporter(s) :


30.
Author(s) :
Y. Li, H.-B. Wang, R. Liu, L. Chen, I. Nofal, Q. Chen, A. He, G. Guo, Sanghyeon Baeg, S.-J. Wen, R. Wong, Q. Wu, and M. Chen
 
Title :
A 65 nm Temporally Hardened Flip-Flop Circuit
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 63, no. 6, pp.2934-2940, Dec. 2016
 
Supporter(s) :


29.
Author(s) :
H.-B. Wang, J. S. Kauppila, K. Lilja, M. Bounasser, L. Chen, M. Newton, Y.-Q. Li, R. Liu, B. Bhuva, S.-J. Wen, R. Wong, R. Fung, Sanghyeon Baeg, and L. W. Massengill
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 64, no. 1, pp. 367-373, Jan. 2017
 
Supporter(s) :
 
28.
Author(s) :
Kyungbae Park, Chulseung Lim, Donghyuk Yun, and Sanghyeon Baeg
 
Title :
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3x nm technology
 
Appears in :
Journal of Microelectronics Reliability, vol. 57, pp 39-46, Feb. 2016
 
Supporter(s) :
전자정보디바이스산업원천기술개발사업, Cisco Systems, Inc.

27.
Author(s) :
Habin Wang, N. Mahatme, Li Chen, M. Newton, Y.-Q.Li, R. Liu, M. Chen, B.L. Bhuva, K. Lilja, S.-J. Wen, R. Wong, R. Fung, and Sanghyeon Baeg
 
Title :
Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 63, no. 1, pp. 385-391, Feb. 2016
 
Supporter(s) :


26.
Author(s) :
Q. Wu, Y.-Q.Li, L. Chen, A.-L. He, G. Guo, Sanghyeon Baeg, H.-B. Wang, S.-J. Wen, R. Wong, S. Allman, and R. Fung
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 1898-1904, Apr. 2015
 
Supporter(s) :
 
25.
Author(s) :
Haibin Wang, Bhuva Bharat L, Shi-Jie Wen, Richard Wong, Sanghyeon Baeg, Nihaar Mahatme, Yuanqing Li, Rui Liu, and Chen Li
 
Title :
An SEU-Tolerant DICE Latch Design With Feedback Transistors
 
Appears in :

IEEE Trans. Nucl. Sci., vol. 62, no. 2, pp. 548-554, Apr. 2015.

 

Supporter(s) :



24.
Author(s) :
Chulseung Lim, Hyunsoo Jeong, Geunyong Bak, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 62, no. 2, pp. 520-526, Apr. 2015
 
Supporter(s) :
NRF, NIPA, and GRRC
 
23.
Author(s) :
Haibin Wang, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, and Jinshun Bi
 
Title :
Single Event Resilient Dynamic Logic Designs
 
Appears in :
Journal of Electronic Testing: Theory and Applications, vol. 30, no. 6, pp. 751-761, Dec. 2014
 
Supporter(s) :
 

22.
Author(s) :
Sang Hoon Jeon, Soonyoung Lee, Sanghyeon Baeg, Ilgon Kim, and Gunrae Kim
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 61, no. 5, pp. 2711-2717, Sep. 2014.
 
Supporter(s) :
EST, NRF, and NIPA 

21.
Author(s) :
Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, ShiJie Wen, and Richard Wong
 
Title :
Soft Error Tolerant Content Addressable Memories (CAM) Using Error Detection Codes and Duplication
 
Appears in :
Microprocessors and Microsystems, vol. 37, Issue 8, pp. 1103-1107, Nov. 2013
 
Supporter(s) :


20.
Author(s) :
Syed Mohsin Abbas, Soonyoung Lee, Sanghyeon Baeg, and Sungju Park
 
Title :
 
Appears in :
IEEE Trans. on Computers, vol. 63, no. 8, pp. 2094-2098, Apr. 2013
 
Supporter(s) :
GRRC 
 
19.
Author(s) :
Soonyoung Lee, Sanghoon Jeon, Sanghyeon Baeg, and Dongho Lee
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 60, no. 2, pp. 1384-1389, Apr. 2013.
 
Supporter(s) :
Samsung Electronics and EST
 
18.
Author(s) :
Zahid Ullah and Sanghyeon Baeg
 
Title :
 
Appears in :
International Journal of Engineering and Technology, vol. 4, no. 6, pp. 760-764, Dec. 2012.
 
Supporter(s) :
GRRC
 
17.
Author(s) :
Sanghyeon Baeg, Soonyoung Lee, Geun Yong Bak, Hyunsoo Jeong, and Sang Hoon Jeon
 
Title :
 
Appears in :
Journal of the Korean Physical Society, vol. 61, no. 5, pp. 749-753, Sep. 2012
 
Supporter(s) :
Samsung Electronics and Cisco Systems, Inc
 
16.
Author(s) :
Zahid Ullah, Ilgon Kim, and Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Trans. Circuits Syst. I, Reg. Papersvol. 59, no. 12, pp. 2969-2979, Dec. 2012
 
Supporter(s) :
GRRC
 
15.
Author(s) :
Jongsun Bae, Sanghyeon Baeg, and Sungju Park
 
Title :
 
Appears in :
IEEE Trans. Instrum. Measvol. 61, no. 12, pp. 3259-3272, Dec. 2012
 
Supporter(s) :
Samsung Electronics and EST
 
14.
Author(s) :
Soonyoung Lee, Sanghyeon Baeg, and Pedro Reviriego
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 58, no. 5, pp. 2483-2492, Oct. 2011.
 
Supporter(s) :
GRRC
 
13.
Author(s) :
Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
 
Title :
 
Appears in :
ACM Trans. on Design Auto. of Elec. Syst., vol. 16, issue 4, pp. 45:1-45:10, Oct. 2011.
 
Supporter(s) :
-
 
12.
Author(s) :
Pedro Reviriego Vasallo, Juan Antonio Maestro De la Cuerda, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 57, no. 4, pp. 2124-2128, Aug. 2010.
 
Supporter(s) :
-
 
11.
Author(s) :
Pedro Reviriego, Juan Antonio Maestro, and Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Trans. Device Mater. Rel., vol. 10, no. 2, pp. 192-200, June 2010.
 
Supporter(s) :
-
 
10.
Author(s) :
Sanghyeon Baeg, ShiJie Wen, and Richard Wong
 
Title :
 
Appears in :
IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 4, pp. 814-822, Apr. 2010.
 
Supporter(s) :
ITRC and GRRC
 
9.
Author(s) :
Sanghyeon Baeg, ShiJie Wen, and Richard Wong
 
Title :
 
Appears in :
IEEE Trans. Nucl. Sci., vol. 56, no. 4, pp. 2111-2118, Aug. 2009.
 
Supporter(s) :
ITRC
 
8.
Author(s) :
Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Trans. Instrum. Meas., vol. 58, no. 8, pp. 2544-2556, Aug. 2009.
 
Supporter(s) :
GRRC and ITRC
 
7.
Author(s) :
Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Trans. Instrum. Meas., vol. 58, no. 10, pp. 3450-3456, Oct. 2009.
 
Supporter(s) :
GRRC and ITRC
 
6.
Author(s) :
Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 55, no.6, pp. 1485-1494, July 2008.
 
Supporter(s) :
GRRC
 
5.
Author(s) :
Sanghyeon Baeg
 
Title :
 
Appears in :
IEICE Trans. on Communications, vol. 91-B, no.3, pp. 915-917, Mar. 2008.
 
Supporter(s) :
GRRC
 
4.
Author(s) :
Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 26, no. 12, pp. 2215-2221, Dec. 2007.
 
Supporter(s) :
Hanyang University
 
3.
Author(s) :
P. Min, H. Yi, J. Song, Sanghyeon Baeg, and S. Park
 
Title :
 
Appears in :
IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 25, no. 11, pp. 2605-2608, Nov. 2006.
 
Supporter(s) :
System IC 2010 and BK 21
 
2.
Author(s) :
Sanghyeon Baeg and S. Chung
 
Title :
 
Appears in :
IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 13, no. 3, pp. 370-383, March 2005.
 
Supporter(s) :
-
 
1.
Author(s) :
Sanghyeon Baeg and William A. Rogers
 
Title :
 
Appears in :
IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 18, no. 6, pp. 850-861, June 1999.
 
Supporter(s) :
-
 
 
International Conferences


35.
Author(s) :
Donghyuk Yun, Myungsang Park, Chulseung Lim, and Sanghyeon Baeg
 
Title :
Study of TID Effects on One Row Hammering using Gamma in DDR4 SDRAMs
 
Submitted to :
Poster, IEEE International Reliability Physics Symposium (IRPS), Mar. 2018
 
Supporter(s) :
 

34.
Author(s) :
I. Nofal, A. Evans, Y. Li, L. Chen, R. Liu, H.-B. Wang, M. Chen, A.-L. He, G. Guo, Sanghyeon Baeg, S.-J. Wen, R. Wong
 
Title :
BPPT-Bulk Potential Protection Technique for Hardened Sequentials
 
Appears in :
2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS), Jul. 2017
 
Supporter(s) :

 
33.
Author(s) :
Sanghyeon Baeg
Title :
Soft Error Hardened Flip-Flop Based on a Novel Bulk Potential Management Technique
Appears in :
SELSE 13 Workshop - Silicon Errors in Logic - System Effects, Mar. 2017
Supporter(s) :

32.
Author(s) :
Myungsang Park, Sang Hoon Jeon, Geun Yong Bak, Chulseung Lim, Sanghyeon Baeg, ShiJie Wen, Richard Wong, and Nick Yu
Title :
Appears in :
Poster, IEEE International Reliability Physics Symposium (IRPS), Apr. 2017
Supporter(s) :

31.
Author(s) :
Sanghyeon Baeg, Seungjae Jeong, Gunasekaran Ramasamy, Nelson hua, and Young Lee
Title :
HBM Memory Fault Grading and Results
Appears in :
Poster, IEEE International Test Conference(ITC), Nov. 2016
Supporter(s) :
Cisco Systems Inc., Coolmem

30.
Author(s) :
Geunyong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, and Charlie Slayman
Title :
Appears in :
IEEE International Reliability Physics Symposium (IRPS), Apr. 2015
Supporter(s) :
-
 
29.
Author(s) :
Kyungbae Park, Sanghyeon Baeg, Shijie Wen, and Richard Wong
Title :
Appears in :
IEEE International Reliability Workshop, Oct, 2014.
Supporter(s) :
NRF and BK21+ 

28.
Author(s) :
K. Lilja, H.-B. Wang, M. Bounasser, N. Mahatme, S.-J. Wen, R. Wong, R. Fung, Sanghyeon Baeg, B. Bhuva, and L. Chen
Title :
Voltage Dependence of Single Event Error Rates for Flip-Flops in Advanced Technologies - from Nominal to Near Threshold
Appears in :
Supporter(s) :
-
 
27.
Author(s) :
H.-B. Wang, Li Chen, K. Lilja, M. Bounasser, N. Mahatme, B. Bhuva, S.-J. Wen, R. Wong, R. Fung, and Sanghyeon Baeg
Title :
Impact of Well Ties on Single Event Transient Width
Appears in :
Supporter(s) :
-
 
26.
Author(s) :
Sanghyeon Baeg
 
Title :
MCU Effects on SER Modeling with Memory Architecture Parameters
 
Appears in :
 
Supporter(s) :
-
 
25.
Author(s) :
Xinli Gu and Sanghyeon Baeg
 
Title :
Why Memory Test Is Still a Challenge?
 
Appears in :
SEMICON China 2012, March 2012.
 
Supporter(s) :
Huawei Technologies
 
24.
Author(s) :
Sanghyeon Baeg, S. Lee, K. Y. Park, S. Wen, and R. Wong
 
Title :
 
Appears in :
 
Supporter(s) :
 
 
23.
Author(s) :
Sanghyeon Baeg, Jongsun Bae, Soonyoung Lee, Chul Seung Lim, Sang Hoon Jeon, and Hyeonwoo Nam
 
Title :
 
Appears in :
 
Supporter(s) :
-
 
22.
Author(s) :
J.A. Maestro, A. Sánchez-Macián, P. Reviriego, and Sanghyeon Baeg
 
Title :
Optimizing the Protection of Narrow Values in Memories Protected with Hamming Codes
 
Appears in :
 
Supporter(s) :
-
 
21.
Author(s) :
Sanghyeon Baeg, Pierre Chia, ShiJie Wen, and Richard Wong
 
Title :
 
Appears in :
 
Supporter(s) :
GRRC
 
20.
Author(s) :
Reviriego, P., Maestro, J.A., and Sanghyeon Baeg
 
Title :
 
Appears in :
Design Automation Conference (DAC), pp. 700-705, June 2011.
 
Supporter(s) :
-
 
19.
Author(s) :
Sanghyeon Baeg, Hyeonwoo Nam, ShiJie Wen and Richard Wong
 
Title :
 
Appears in :
Reliability Physics Symposium (IRPS), pp. 2D.1.1-1.4, April 2011.
 
Supporter(s) :
GRRC
 
18.
Author(s) :
Syed Mohsin Abbas, Sanghyeon Baeg and Sungju Park
 
Title :
Multiple Cell Upsets Tolerant Content-Addressable Memory
 
Appears in :
Reliability Physics Symposium (IRPS), pp. SE.1.1-1.5, April 2011
 
Supporter(s) :
GRRC
 
17.
Author(s) :
Changmin Jung, Sanghyeon Baeg, ShiJie Wen, and Richard Wong
 
Title :
 
Appears in :
 
Supporter(s) :
GRRC
 
16.
Author(s) :
C.-F. Chia, S.-J. Wen, and Sanghyeon Baeg
 
Title :
 
Appears in :
 
Supporter(s) :
-
 
15.
Author(s) :
Zahid Ullah and Sanghyeon Baeg
 
Title :
 
Appears in :
IEEE International Conference on Intelligence and Information Technology(ICIIT 2010), Oct. 2010
 
Supporter(s) :
GRRC
 
14.
Author(s) :
Jongsun Bae, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
 
Title :
 
Appears in :
 
Supporter(s) :
GRRC
 
13.
Author(s) :
Soonyoung Lee, Sanghyeon Baeg, and Pedro Reviriego
 
Title :
 
Appears in :
 
Supporter(s) :
GRRC
 
12.
Author(s) :
Pedro Reviriego, Juan Antonio Maestro, Sanghyeon Baeg, Shijie Wen and Richard Wong
 
Title :
 
Appears in :
 
Supporter(s) :
GRRC
 
11.
Author(s) :
Sanghyeon Baeg, Pedro Reviriego, Juan Antonio Maestro, ShiJie Wen, and Richard Wong
 
Title :
 
Appears in :
 
Supporter(s) :
ITRC
 
10.
Author(s) :
Hyo-deok Shin, Sang-wook Ahn, Tae-hoon Song, and Sanghyeon Baeg
 
Title :
 
Appears in :
8th IFAC International Conference on Fieldbuses and Networks in industrial and embedded systems (FeT), pp. 34-39, May 2009.
 
Supporter(s) :
GRRC
 
9.
Author(s) :
Sanghyeon Baeg, ShiJie Wen, and Richard Wong
 
Title :
SRAM Interleaving Distance Selection with a Soft Error Failure Model
 
Appears in :
 
Supporter(s) :
ITRC
 
8.
Author(s) :
Luis Boluna, Kelvin Qiu, Ehsan Kabir, Susmita Mutsuddy, Daniel Ho, and Sanghyeon Baeg
 
Title :
 
Appears in :
IBIS Summit Meeting, Santa Clara, CA., U.S.A, Feb 7, 2008
 
Supporter(s) :
-
 
7.
Author(s) :
H. Jun, S. Chung, and Sanghyeon Baeg
 
Title :
 
Appears in :
Proc. Int’l Test Conf. (ITC), pp. 173-180, Oct. 2004
 
Supporter(s) :
-
 
6.
Author(s) :
S. Chung and Sanghyeon Baeg
 
Title :
 
Appears in :
 
Supporter(s) :
-
 
5.
Author(s) :
Sanghyeon Baeg, H.R. Kim, C.H. Cho, and H.C. Kim
 
Title :
Embedded Memory BIST of Serial Test Vector Generation, Serial Output Comparison
 
Appears in :
Second International Test Synthesis Workshop, May 1995.
 
Supporter(s) :
-
 
4.
Author(s) :
Sanghyeon Baeg and William A. Rogers
 
Title :
 
Appears in :
Proc. Int’l Test Conf. (ITC), pp. 340-349, Oct. 1994
 
Supporter(s) :
-
 
3.
Author(s) :
Sanghyeon Baeg and William A. Rogers
 
Title :
 
Appears in :
IEEE International Conference on Computer Design: VLSI in Computers and Processors, pp. 354-358, Oct. 1994
 
Supporter(s) :
-
 
2.
Author(s) :
Sanghyeon Baeg and William A. Rogers
 
Title :
 
Appears in :
Proc. in International Workshop on The Economics of Design, Test and Manufacturing, May 1994
 
Supporter(s) :
-
 
1.
Author(s) :
Sanghyeon Baeg and William A. Rogers
 
Title :
 
Appears in :
Proc. of the IEEE Custom Integrated Circuits Conference, pp. 26.2.1-26.2.4, May 1993
 
Supporter(s) :
-
 
 
Domestic Journals


7.
Author(s) :
Nosheen Shahzadi, and Sanghyeon Baeg
 
Title :
 
Submitted to :
JSTS(Journal of Semiconductor Technology  Science), vol. 22, no. 4, pp. 234-243, Jul. 2022, doi: 10.5573/JSTS.2022.22.4.234
 
Supporter(s) :
NRF (2020R1H1A2103043), KIAT and MOTIE (P0012451)
 
6.
Author(s) :
Kiseok Lee, Tan Li, and Sanghyeon Baeg
 
Title :
Experimental Exploitation of Random and Deterministic Data Patterns for Stringent DDR4 I/O Timing Margins
 
Submitted to :
Journal of Semiconductor Technology and Science (JSTS), vol. 19, no. 4, pp. 388-395, Aug. 2019
 
Supporter(s) :
MOTIE and KSRC (10052875) and NRF (2017R1A2B2002325)

5.
Author(s) :
Sangwook Ahn, Changmin Jung, Chulseung Lim, Soonyoung Lee, and Sanghyeon Baeg
 
Title :
 
Appears in :
Journal of the IEEK-SD, vol. 49, no. 2, pp. 39-46, 2012
 
Supporter(s) :
GRRC
 
4.
Author(s) :
Soonyoung Lee and Sanghyeon Baeg
 
Title :
Introduction of Soft Errors in Semiconductor Memories
 
Appears in :
The Magazine of the ISTK, vol. 2, no. 4, pp. 208-213, 2010
 
Supporter(s) :
GRRC
 
3.
Author(s) :
Sang-Nam Jeong and Sanghyeon Baeg
 
Title :
 
Appears in :
Journal of the IEEK-SD, vol. 45, no. 9, pp. 79-84, Sep. 2008
 
Supporter(s) :
GRRC
 
2.
Author(s) :
J. Oh, M. Kim, and S. Baeg
 
Title :
 
Appears in :
The Magazine of the ISTK, vol. 1, no. 2, pp. 130-136, 2008
 
Supporter(s) :
-
 
1.
Author(s) :
M. Kim and S. Baeg
 
Title :
Characteristic and Performance of AC-Coupled Channel
 
Appears in :
The Magazine of the ISTK, vol. 1, no. 3, pp. 189-195, 2008
 
Supporter(s) :
-
 
 
Domestic Conferences


30. 
Author(s) : 
Jeonghwan Kim, and Sanghyeon Baeg
Title : 
시스템 레벨에서의 DDR4의 컴포넌트 취약성 비교에 따른 Row Hammer 고찰
Appears in : 
2020 Korea Test Conference, Oct. 2020
Supporter(s) : 
 
29. 
Author(s) : 
Junhyeong Kwon, and Sanghyeon Baeg
Title : 
Variation of I/O Margin According to the High Temperature Operating Experiment of DDR4 DIMM
Appears in : 
2019 Korea Test Conference, Jun. 2019
Supporter(s) : 
 
 
28. 
Author(s) : 
Youngbin Chang and Sanghyeon Baeg
Title : 
Micro-probing을 통한 DC 측정 방법에 대한 고찰
Appears in : 
2018 Korea Test Conference, Jun. 2018
Supporter(s) : 
 
 
27. 
Author(s) : 
Junhyeong Kwon, and Sanghyeon Baeg
Title : 
Change of I/O margin according to data pattern in DDR4 DIMM
Appears in : 
2018 Korea Test Conference, Jun. 2018
Supporter(s) : 
 
 
26. 
Author(s) : 
Kiseok Lee, and Sanghyeon Baeg
Title : 
DDR4 SRAM에서 DQS에 따른 I/O 마진 값의 변화
Appears in : 
2017 Korea Test Conference, Jun. 2017
Supporter(s) : 
 
25. 
Author(s) : 
Shin-woo Noh, and Sanghyeon Baeg
Title : 
TSV-Microbump 간에 발생하는 Open Defect의 모델링에 대한 고찰
Appears in : 
2017 Korea Test Conference, Jun. 2017
Supporter(s) : 
 
23.
Author(s) :
SeHyuck Wi, Junhyeong Kwon, and Sanghyeon Baeg
Title :
Data Margin impact of the 800Mhz DDR3 DIMM pad wear
Appears in :
2016 Korea Test Conference, Jun. 2016
Supporter(s) :
 
 
22.
Author(s) :
Sin-woo Noh, Hosung Lee, and Sanghyeon Baeg
Title :
TSV Pin-hole Test Method using DC Voltage
Appears in :
2016 Korea Test Conference, Jun. 2016
Supporter(s) :
 
 
21.
Author(s) :
Donghyuk Yun, Kyungbae Park, Geunyong Bak, and Sanghyeon Baeg
Title :
Retention Test of DIMM Module by Local Heating
Appears in :
2015 Korea Test Conference, Sep. 2015
Supporter(s) :
 
GRRC and NIPA
 
20.
Author(s) :
Muhammad Waqar, Hosung Lee, Geunyong Bak, Saqib Ali Khan, and Sanghyeon Baeg
Title :
DIMM Press-fit Socket Pin Seating Position Effect on Socket to System Board Interconnect
Appears in :
2015 Korea Test Conference, Sep. 2015
Supporter(s) :
 
GRRC and NIPA
 
19.
Author(s) :
Hosung Lee and Sanghyeon Baeg
Title :
An Indirect Diagnosis of VTT Power Rail Defect in DDR3 Memory System by Using Intensive Address Switching Test Algorithms
Appears in :
2015 Korea Test Conference, Sep. 2015
Supporter(s) :
 
GRRC and NIPA
 
18.
Author(s) :
Chulseung Lim, Geunyong Bak, Kyungbae Park, and Sanghyeon Baeg
 
Title :
 
Appears in :
2015 The Institute of Electronics and Information Engineers Conference, June 2015
 
Supporter(s) :
GRRC
 
17.
Author(s) :
Hosung Lee and Sanghyeon Baeg
Title :
A Case Study of JTAG Interface Connection Failure in FPGA System Caused by SMT Defect
Appears in :
2014 Korea Test Conference, June 2014
Supporter(s) :
 
GRRC
 
16.
Author(s) :
Kiseok Lee, SeungJae Jeong, Kyungbae Park, and Sanghyeon Baeg
 
Title :
Substitutive model of the sense amplifier dynamic 2-cell incorrect read fault of type 1
 
Appears in :
2013 Korea Test Conference, June 2013
 
Supporter(s) :
-
 
15.
Author(s) :
Hyeonwoo Nam and Sanghyeon Baeg
 
Title :
DRAM Word Line Driver Circuit Operation by Hot Carrier Injection
 
Appears in :
2012 Korea Test Conference, June 2012
 
Supporter(s) :
GRRC and IPC
 
14.
Author(s) :
SeungJae Jeong and Sanghyeon Baeg
 
Title :
March C- using address rotation for detecting Delay Coupling Fault
 
Appears in :
2012 Korea Test Conference, June 2012, (Best Paper Award)
 
Supporter(s) :
Huawei Technologies
 
13.
Author(s) :
Soonyoung Lee, Hyeonwoo Nam, and Sanghyeon Baeg
 
Title :
면적 효율과 -해상도의 -보정이 가능한 CMOS 버니어 딜레이 라인 디자인
 
Appears in :
19 한국반도체학술대회, 2012
 
Supporter(s) :
GRRC and IDEC
 
12.
Author(s) :
Ilgon Kim and Sanghyeon Baeg
 
Title :
Implementation of 8051 8-bit Processor with Variable Pipeline Stages
 
Appears in :
2010 ISOCC Chip Design Contest, Nov. 2010
 
Supporter(s) :
-
 
11.
Author(s) :
Jongsun Bae and Sanghyeon Baeg
 
Title :
Analysis of VDDmin Shift by Mixed Gate Oxide Breakdown and NBTI in SRAM
 
Appears in :
The 11th Korean Test Conference, June 2010
 
Supporter(s) :
GRRC
 
10.
Author(s) :
Soonyoung Lee, Sikandar Z. Khan, Sangwook Ahn, and Sanghyeon Baeg
 
Title :
Design of Area Efficient High Resolution CMOS Vernier Delay Line Cell
 
Appears in :
ieek Conference, 2010
 
Supporter(s) :
GRRC
 
9.
Author(s) :
Sungmin Oh and Sanghyeon Baeg
 
Title :
Power Saving Model with the Conversion of Parallel Interface to Serial Interface
 
Appears in :
SoC Conference at Inha University, May 2010
 
Supporter(s) :
ETRI
 
8.
Author(s) :
Jae Doo Jung and Sanghyeon Baeg
 
Title :
Ground Pin Removal Method Implementations for Delay Test in Probe Card Environment
 
Appears in :
The 10th Korea Test Conference, 2009
 
Supporter(s) :
GRRC
 
7.
Author(s) :
JungKyun Oh, Minsuk Kim, and Sanghyeon Baeg
 
Title :
AC Coupling Capacitor Test using Hysteresis Buffer
 
Appears in :
The 9th Korea Test Conference, 2008
 
Supporter(s) :
GRRC
 
6.
Author(s) :
Changmin Jung and Sanghyeon Baeg
 
Title :
Ground bounce effects on the Devices under NBTI stress
 
Appears in :
The 15th Korean Conference on Semiconductors, 2008
 
Supporter(s) :
GRRC
 
5.
Author(s) :
Taewon Choi and Sanghyeon Baeg
 
Title :
Ground Bounce Analysis in Impact of NBTI on SRAM Cell
 
Appears in :
The 8th Korea Test Conference, 2007
 
Supporter(s) :
GRRC and IT-SoC
 
4.
Author(s) :
Jongsun Bae and Sanghyeon Baeg
 
Title :
Analysis of AC Coupling Defect for SRAM Cell
 
Appears in :
The 8th Korea Test Conference, 2007
 
Supporter(s) :
GRRC and IT-SoC
 
3.
Author(s) :
Taewon Choi, KyoungBae Park, Jongsun Bae, Sangnam Jung and Sanghyeon Baeg
 
Title :
Ternary CAM IP Design Using 0.18-um CMOS Technology
 
Appears in :
The Korean Conference on Semiconductors, 2007 (Best Design Award)
 
Supporter(s) :
-
 
2.
Author(s) :
KyoungBae Park and Sanghyeon Baeg
 
Title :
di/dt Analysis Based on Layout Driven Current Path Modeling of CAM Match- line
 
Appears in :
The Korean Conference on Semiconductors, 2007
 
Supporter(s) :
-
 
1.
Author(s) :
Jongsun Bae and Sanghyeon Baeg
 
Title :
Analysis and Detection Capacitive Crosstalk Defects Between Memory Cells
 
Appears in :
The 7th Korea Test Conference, pp. 157-162, June 2006 (Best Paper Award)
 
Supporter(s) :
IT-SoC

Presentation
18. 백상현, "어보브반도체 기술회의", 어보브반도체, Aug. 11, 2022.
17. 백상현, "Radiation-Induced Soft Errors in DRAMs", 제11회 한일 공동 여름학교(양성자과학연구단 주관) , Aug. 3, 2022
16. 백상현, "방사선에 의한 소프트에러", 삼성종합기술원, Jun. 23, 2022
15. 백상현, "우주환경 DRAM 부품의 영향", 부품연구원, Apr. 6, 2022
14. 백상현, "양성자를 이용한 DRAM 에서의 SEE 방사선 영향 평가", 양성자 과학단, Mar. 23, 2022
13. 백상현, 박명상, 전상훈, "4차 산업혁명을 위한 영구적 자가 발전기능 소형 센서", 알키미스트 프로젝트 대국민 아이디어 공모전 (최우수상), Dec. 13, 2019
12. 백상현, "대기권 대역 자연 방사선에 의한 반도체 및 전자 시스템 영향", 극지연구소, Apr. 2019
11. Sanghyeon Baeg, "Logic Errors in DDR4 SDRAM Using Proton Beam", Xi'an Jiaotong University, Oct. 2019
10. Sanghyeon Baeg, "Weakening Retention and Hammering Functions by Radiating DDR4/DDR3 Components", CRC Research Talk, March, 2019
9. Sanghyeon Baeg, "Logic Errors in DDR4 SDRAM Using Proton Beam", Jilin University, Dec. 2018
8. Sanghyeon Baeg, "Radiation Effects and Trends in DRAMs", Automotive Semiconductor Safety Innovation Conference(ASSIC) Korea 2018, Sep. 11, 2018
7. Sanghyeon Baeg, "Row-hammer characteristics in hardware perspective", Systems & Platform Security PI Summit at Cisco Systems Inc. Dec. 7, 2017
6. 백상현, "Soft Error in Semiconductor", Seminar at SK Hynix, July, 2017
5. 백상현, "Seminar for Samsung Electronics", Seminar at Samsung, Dec. 2016
4. 백상현, "Test Correlation at Chip Level & System Level", WRTLT'14(The Fifteenth Workshop on RTL and High Level Testing), Nov. 20, 2014
3. Sang H. Baag, Seungjae Jeong, Kiseok Lee and Xinli Gu, "Metrics Development of Characterizing Test Algorithms Activity in Relation to Physical Memory Structure", China Semiconductor Technology Internation Conference (CSTIC) 2014, March 16-17, 2014
2. 정성수, "SiP and Future of Semiconductor Test", 제 15회 한국테스트학술대회 튜토리얼, Jun. 25, 2014
1. 백상현, "반도체 테스트 동향 및 이슈", 반도체 콜로키움 (반도체 package, test 기술 및 산업 전망), Apr. 3, 2013

 
IEEE Standard 
54 Members including S. Baeg, “1149.6 IEEE Standard for Boundary-Scan Testing of Advanced Digital Network”, IEEE Press, April 2003 
 
Books 
3. Interconnect Tests Issues and Strategies, total of 147 pages, Sanghyeon Baeg, 2006, IT-Soc, Korea 
2. CMOS IP Design, total of 73 pages, Sanghyeon Baeg, 2006, IDEC, Korea 
1. UNIX System V Guide Book, total of 655 pages, Sanghyeon Baeg, Kidari Press, 1991, Korea 
 
U.S.A Patents 
12. Chung Sung Soo, Baeg Sang Hyeon, “AC coupled line testing using boundary scan test methodology”, 09/11/2007, USA Patent No. : 7,174,492 
11. S. Baeg, and S. Chung, “Test buffer design and interface mechanism for differential receiver AC/DC boundary scan test”, Aug. 8, 2006, USA Patent Number : 7089463 
10. S. Baeg, S. Chung, and H. Jun, “Programmable test pattern and capture mechanism for boundary scan”, Aug. 8, 2006, USA Patent Number : 7089470 
9. Baeg Sanghyeon , Yu Edward, “Clock generation for testing of integrated circuits”,09/08/1998, USA Patent Number : 5805608 
8. Qureshi Amjad , Baeg Sanghyeon, “Structure and Method for SDRAM dynamic self refresh entry and exit using JTAG”, 08/11/1998, USA Patent Number : 5793776 
7. Baeg Sanghyeon, “Low cost emulation scheme implemented via clock control JTAG controller in a scan environment”, 09/22/1998, USA Patent Number : 5812562 
6. Baeg SangHyeon, Rogers William A., “Integrated circuit having clock-line control and method for testing same”, May 21, 1996, USA Patent Number : 5519713 
5. Qureshi Amjad, Baeg Sanghyeon, “Adaptable scan chains for debugging and manufacturing test purposes”, 08/11/1998, USA Patent Number : 5793776 
4. Kim Heon-cheol, Kim Ho-ryong, Baeg Sang-hyeon, Cho Chang-hyun, “A method of testing single-order address memory”, 01/06/1998, USA Patent Number : 5706293 
3. Baeg Sang-hyeon, Lee Seong-won, “Test circuits and methods for built-in testing integrated devices”, 02/01/2000, USA Patent Number : 6019502 
2. Baeg Sang-hyeon, Kim Heon-cheol, Kim Ho-royng, Cho Chang-hyun, “Serial memory interface using interlaced scan”, 05/19/1998, USA Patent Number : 5754758 
1. Baeg Sanghyeon, Yi Dongsoon, “Self-test circuit and method utilizing interlaced scanning for testing a semiconductor memory device”, June 29, 1999, USA Patent Number : 5917832 
 
PCT Patents 
2. Sanghyeon Baeg, Zahid Ullah, "SRAM BASED ADDRESS GENERATOR FOR EACH LAYER AND ADDRESS GENERATOR INCLUDING THE SAME ", IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Publication Number: WO11/071273, Application Number: PCT/KR10/08595 (2010.12.02) 
1. BAEG, Sang-Hyeon, "METHOD OF TESTING SEMICONDUCTOR DEVICE," INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY, Publication Number: WO10/055964, Application Number: PCT/KR08/06757  (2008.11.17) 
 
Domestic Patents
16. 백상현, 윤동혁 "행 해머링을 이용한 DRAM의 성능 분석 방법 및 오류 검출 방법", 한양대학교 산학협력단출원, 출원번호: 10-2021-0061473, 출원일: 2021.05.12
15. 백상현, 알리아메드 "비트 수를 증가시킨 SRAM 기반 TCAM의 동작 방법 및 시스템", 한양대학교 산학협력단출원, 출원번호: 10-2015-0134450, 출원일: 2015.09.23
14. 백상현, 임철승 "반도체 메모리 장치의 프리차지 제어 회로 및 방법", 한양대학교 산학협력단출원, 출원번호: 10-2015-0073970, 출원일: 2015.05.27, 등록번호: 10-1725636, 등록일자: 2017.04.04
13. 백상현, 정성수 "리페어 가능한 관통 전극을 갖는 반도체 장치", 한양대학교 산학협력단출원출원번호: 10-2014-0069928출원일: 2014.06.10 (정보통신산업진흥원(대전사무소))
12. 백상현, 정현수 "극저온 냉매를 이용한 국부적 저온 챔버", 한양대학교 산학협력단출원, 출원번호: 10-2014-0026785, 출원일: 2014.03.06 ((재)한국연구재단 지원)
11. 백상현, 이호성 "이중 인라인 메모리 모듈 및 테스트 소켓을 이용한 고속 메모리 콤포넌트 테스트 시스템 및 장치",한양대학교 산학협력단출원, 출원번호: 10-2013-0032708, 출원일: 2013.3.27, 등록번호: 10-141010100000,등록일자: 2014.06.13 (GRRC 7차년도 지원)
10. 백상현, 남현우 "드라이아이스를 이용한 국부적 저온 챔버 개발",한양대학교 산학협력단출원, 출원번호: 10-2012-0149884, 출원일: 2012.12.20 (GRRC 7차년도 지원)
9. 백상현, 울라자히드, "SRAM 기반의 계층별주소 생성장치 그를 포함하는주소 생성장치 (SRAM based address generator for each layer and address generator comprising the same)," 한양대학교산학협력단 출원, 출원번호: 10-2009-0121318, 출원일자: 2009.12.08, 등록번호: 10-1074495, 등록일자: 2011.10.11, (지식경제부 ITRC사업실적
8. 백상현, 안상욱, 배종선, 신효덕, "레일투레일 저전력전압 센스증폭기", 한양대학교산학협력단 출원,출원번호: 10-2008-0130513, 출원일: 2008.12.19, 등록번호: 10-1061634, 등록일: 2011 826 (지식경제부ITRC사업 지원
7. 백상현, "이벤트시간 측정방법 회로", 한양대학교산학협력단 출원, 출원번호: 10-2010-0049204, 출원일: 2010.05.26, 등록번호: 10-1061634  등록일: 2011.07.25, (GRRC 6차년도 지원실적(등록)) 
6. 백상현, "반도체소자의 테스트방법(파워/그라운드 제거테스트 방법)", 한양대학교 산학협력단출원, 출원번호: 2008-0113772, 출원일: 2008.11.17, 등록번호: 10-1002102, 등록일: 201012 10(GRRC 5차년도 실적(등록)) 
5. 백상현, 배종선, "반도체 메모리장치 그것의 테스트방법," 한국전자통신연구원, 한양대학교 산학협력단공동출원, 출원번호: 2007-0083963, 출원일: 2007.08.21, 등록번호: 10-0919819, 등록일: 2009.09.24 (IT-SoC 설계실습프로젝트실적(출원)) 
4. 백상현, 배종선, "단위셀 간의연결고장 테스트를위한 반도체메모리 장치 테스트방법"(SEMICONDUCTOR MEMORY DEVICE FOR TESTING CAPACITIVE CROSSTALK DEFECTS BETWEEN UNIT CELLS AND TEST METHOD THEREIN);, 한국전자통신연구원, 한양대학교 산학협력단, 출원번호: 2007-0071751, 출원일: 2007.07.18, 등록번호: 10-0919819-0000, 등록일: 2009.02.19 
3. 백상현, "메모리폴트 시뮬레이션응용에서 시간고려고장 모델 물리적구조 기술", 한양대학교 산학협력단출원, 출원번호: 10-2011-0021822, 출원일: 2011.03.11 
2. 백상현, 박성주, 사이드모흐신, "내용주소화 메모리의다중 고장을 허용하기위한 방법 장치", 한양대학교 산학협력단출원, 출원번호: 10-2010-0120903, 출원일: 2010.11.30 
1. 백상현, "반도체소자의 테스트방법 이를 위한노이즈 발생방법(di/dt)", 한양대학교 산학협력단출원, 출원번호: 10-2010-0045553, 출원일: 2010.05.14 (GRRC 실적
 
Software License 
백상현, 이순영, "메모리 비트 뷰어", 한양대학교 산학협력단, 2009/11/25, 등록번호 2009-01-121-006532