rsc_board > Web_Pub > publication 2013-01-14

28.	Author(s) :	Kyungbae Park, Chulseung Lim, Donghyuk Yun, and Sanghyeon Baeg
	Title :	Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3x nm technology
	Appears in :	Journal of Microelectronics Reliability, vol. 57, pp 39-46, Feb. 2016
	Supporter(s) :	전자정보디바이스산업원천기술개발사업, Cisco Systems, Inc.

27.

Author(s) :

Habin Wang, N. Mahatme, Li Chen, M. Newton, Y.-Q.Li, R. Liu, M. Chen, B.L. Bhuva, K. Lilja, S.-J. Wen, R. Wong, R. Fung, and Sanghyeon Baeg

Title :
Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology

Appears in :
IEEE Trans. Nucl. Sci., vol. 63, no. 1, pp. 385-391, Feb. 2016

Supporter(s) :

26.

Author(s) :

Q. Wu, Y.-Q.Li, L. Chen, A.-L. He, G. Guo, Sanghyeon Baeg, H.-B. Wang, S.-J. Wen, R. Wong, S. Allman, and R. Fung

Title :

Supply Voltage Dependence of Heavy Ion Induced SEEs on 65 nm CMOS Bulk SRAMs

Appears in :

IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 1898-1904, Apr. 2015

Supporter(s) :

25.

Author(s) :

Haibin Wang, Bhuva Bharat L, Shi-Jie Wen, Richard Wong, Sanghyeon Baeg, Nihaar Mahatme, Yuanqing Li, Rui Liu, and Chen Li

Title :
An SEU-Tolerant DICE Latch Design With Feedback Transistors

Appears in :

IEEE Trans. Nucl. Sci., vol. 62, no. 2, pp. 548-554, Apr. 2015.

Supporter(s) :

24.

Author(s) :

Chulseung Lim, Hyunsoo Jeong, Geunyong Bak, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong

Title :

Stuck Bits Study in DDR3 SDRAMs using 45-MeV Proton Beam

Appears in :

IEEE Trans. Nucl. Sci., vol. 62, no. 2, pp. 520-526, Apr. 2015

Supporter(s) :

NRF, NIPA, and GRRC

23.

Author(s) :

Haibin Wang, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, and Jinshun Bi

Title :
Single Event Resilient Dynamic Logic Designs

Appears in :
Journal of Electronic Testing: Theory and Applications, vol. 30, no. 6, pp. 751-761, Dec. 2014

Supporter(s) :

22.

Author(s) :

Sang Hoon Jeon, Soonyoung Lee, Sanghyeon Baeg, Ilgon Kim, and Gunrae Kim

Title :

Novel Error Detection Scheme with the Harmonious usage of Parity codes, Well-taps, and Interleaving Distance

Appears in :
IEEE Trans. Nucl. Sci., vol. 61, no. 5, pp. 2711-2717, Sep. 2014.

Supporter(s) :

EST, NRF, and NIPA

21.

Author(s) :

Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, ShiJie Wen, and Richard Wong

Title :
Soft Error Tolerant Content Addressable Memories (CAM) Using Error Detection Codes and Duplication

Appears in :
Microprocessors and Microsystems, vol. 37, Issue 8, pp. 1103-1107, Nov. 2013

Supporter(s) :

20.	Author(s) :	Syed Mohsin Abbas, Soonyoung Lee, Sanghyeon Baeg, and Sungju Park
	Title :	An Efficient Multiple Cell Upsets Tolerant Content-Addressable Memory
	Appears in :	IEEE Trans. on Computers, vol. 63, no. 8, pp. 2094-2098, Apr. 2013
	Supporter(s) :	GRRC

19.	Author(s) :	Soonyoung Lee, Sanghoon Jeon, Sanghyeon Baeg, and Dongho Lee
	Title :	Memory Reliability Analysis for Multiple Block Effect of Soft Errors
	Appears in :	IEEE Trans. Nucl. Sci., vol. 60, no. 2, pp. 1384-1389, Apr. 2013.
	Supporter(s) :	Samsung Electronics and EST

18.	Author(s) :	Zahid Ullah and Sanghyeon Baeg
	Title :	Vertically Partitioned SRAM-based Ternary Content Addressable Memory
	Appears in :	International Journal of Engineering and Technology, vol. 4, no. 6, pp. 760-764, Dec. 2012.
	Supporter(s) :	GRRC

17.	Author(s) :	Sanghyeon Baeg, Soonyoung Lee, Geun Yong Bak, Hyunsoo Jeong, and Sang Hoon Jeon
	Title :	Comparative Study of MC-50 and ANITA Neutron Beams by Using 55 nm SRAM
	Appears in :	Journal of the Korean Physical Society, vol. 61, no. 5, pp. 749-753, Sep. 2012
	Supporter(s) :	Samsung Electronics and Cisco Systems, Inc

16.	Author(s) :	Zahid Ullah, Ilgon Kim, and Sanghyeon Baeg
	Title :	Hybrid Partitioned SRAM-based Ternary Content Addressable Memory
	Appears in :	IEEE Trans. Circuits Syst. I, Reg. Papersvol. 59, no. 12, pp. 2969-2979, Dec. 2012
	Supporter(s) :	GRRC

15.	Author(s) :	Jongsun Bae, Sanghyeon Baeg, and Sungju Park
	Title :	Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress
	Appears in :	IEEE Trans. Instrum. Measvol. 61, no. 12, pp. 3259-3272, Dec. 2012
	Supporter(s) :	Samsung Electronics and EST

14.	Author(s) :	Soonyoung Lee, Sanghyeon Baeg, and Pedro Reviriego
	Title :	Memory Reliability Model for Accumulated and Clustered Soft Errors
	Appears in :	IEEE Trans. Nucl. Sci., vol. 58, no. 5, pp. 2483-2492, Oct. 2011.
	Supporter(s) :	GRRC

13.	Author(s) :	Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
	Title :	Mitigating the effects of large Multiple Cell Upsets (MCUs) in Memories
	Appears in :	ACM Trans. on Design Auto. of Elec. Syst., vol. 16, issue 4, pp. 45:1-45:10, Oct. 2011.
	Supporter(s) :	-

12.	Author(s) :	Pedro Reviriego Vasallo, Juan Antonio Maestro De la Cuerda, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
	Title :	Protection of Memories Suffering MCUs through the Selection of the Optimal Interleaving Distance
	Appears in :	IEEE Trans. Nucl. Sci., vol. 57, no. 4, pp. 2124-2128, Aug. 2010.
	Supporter(s) :	-

11.	Author(s) :	Pedro Reviriego, Juan Antonio Maestro, and Sanghyeon Baeg
	Title :	Optimizing Scrubbing Sequences for Advanced Computer Memories
	Appears in :	IEEE Trans. Device Mater. Rel., vol. 10, no. 2, pp. 192-200, June 2010.
	Supporter(s) :	-

10.	Author(s) :	Sanghyeon Baeg, ShiJie Wen, and Richard Wong
	Title :	Minimizing Soft Errors in TCAM Devices: A Probabilistic Approach to Determining Scrubbing Intervals
	Appears in :	IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 4, pp. 814-822, Apr. 2010.
	Supporter(s) :	ITRC and GRRC

9.	Author(s) :	Sanghyeon Baeg, ShiJie Wen, and Richard Wong
	Title :	SRAM Interleaving Distance Selection with a Soft Error Failure Model
	Appears in :	IEEE Trans. Nucl. Sci., vol. 56, no. 4, pp. 2111-2118, Aug. 2009.
	Supporter(s) :	ITRC

8.	Author(s) :	Sanghyeon Baeg
	Title :	Null Detector Circuit Design Scheme for Detecting Defective AC Coupled Capacitors in Differential Signaling
	Appears in :	IEEE Trans. Instrum. Meas., vol. 58, no. 8, pp. 2544-2556, Aug. 2009.
	Supporter(s) :	GRRC and ITRC

7.	Author(s) :	Sanghyeon Baeg
	Title :	A di/dt Compensation Technique in Delay Testing by Disconnecting Power Pins
	Appears in :	IEEE Trans. Instrum. Meas., vol. 58, no. 10, pp. 3450-3456, Oct. 2009.
	Supporter(s) :	GRRC and ITRC

6.	Author(s) :	Sanghyeon Baeg
	Title :	Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line
	Appears in :	IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 55, no.6, pp. 1485-1494, July 2008.
	Supporter(s) :	GRRC

5.	Author(s) :	Sanghyeon Baeg
	Title :	Low Power Configuration Strategy of TCAM Lookup Table
	Appears in :	IEICE Trans. on Communications, vol. 91-B, no.3, pp. 915-917, Mar. 2008.
	Supporter(s) :	GRRC

4.	Author(s) :	Sanghyeon Baeg
	Title :	Delay Fault Coverage Enhancement by Partial Clocking for Low-Power Designs With Heavily Gated Clocks
	Appears in :	IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 26, no. 12, pp. 2215-2221, Dec. 2007.
	Supporter(s) :	Hanyang University

3.	Author(s) :	P. Min, H. Yi, J. Song, Sanghyeon Baeg, and S. Park
	Title :	Efficient Interconnect Test Patterns for Crosstalk and Static Faults
	Appears in :	IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 25, no. 11, pp. 2605-2608, Nov. 2006.
	Supporter(s) :	System IC 2010 and BK 21

2.	Author(s) :	Sanghyeon Baeg and S. Chung
	Title :	Analytical Test Buffer Design For Differential Signaling I/O Buffers By Error Syndrome Analysis
	Appears in :	IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 13, no. 3, pp. 370-383, March 2005.
	Supporter(s) :	-

1.	Author(s) :	Sanghyeon Baeg and William A. Rogers
	Title :	A Cost-Effective Design for Testability: Clock Line Control and Test Generation Using Selective Clocking
	Appears in :	IEEE Trans. Comput-Aided Design Integr. Circuits Syst., vol. 18, no. 6, pp. 850-861, June 1999.
	Supporter(s) :	-

International Conferences

37.	Author(s) :	Nicholas Pieper, Myungsun Chun, Yoni Xiong, Hannah Dattilo, Jenna Kronenberg, Sanghyeon Baeg, Shi-Jie Wen, Rita Fung, David Chan, Cesar Escobar and Bharat Bhuva
	Title :	Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems
	Submitted to :	IEEE International Reliability Physics Symposium (IRPS), 2024
	Supporter(s) :

36.	Author(s) :	Hyeongseok Oh, Myungsun Chun, Jiwon Lee, Shi-Jie Wen, Nick Yu, Byung-Gun Park and Sanghyeon Baeg
	Title :	Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components
	Submitted to :	Poster, IEEE International Reliability Physics Symposium (IRPS), Mar. 2023
	Supporter(s) :	KIAT and MOTIE (P0012451)

35.	Author(s) :	Donghyuk Yun, Myungsang Park, Chulseung Lim, and Sanghyeon Baeg
	Title :	Study of TID Effects on One Row Hammering using Gamma in DDR4 SDRAMs
	Submitted to :	Poster, IEEE International Reliability Physics Symposium (IRPS), Mar. 2018
	Supporter(s) :

34.	Author(s) :	I. Nofal, A. Evans, Y. Li, L. Chen, R. Liu, H.-B. Wang, M. Chen, A.-L. He, G. Guo, Sanghyeon Baeg, S.-J. Wen, R. Wong
	Title :	BPPT-Bulk Potential Protection Technique for Hardened Sequentials
	Appears in :	2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS), Jul. 2017
	Supporter(s) :

33.

Author(s) :

Sanghyeon Baeg

Title :

Soft Error Hardened Flip-Flop Based on a Novel Bulk Potential Management Technique

Appears in :

SELSE 13 Workshop - Silicon Errors in Logic - System Effects, Mar. 2017

Supporter(s) :

32.

Author(s) :

Myungsang Park, Sang Hoon Jeon, Geun Yong Bak, Chulseung Lim, Sanghyeon Baeg, ShiJie Wen, Richard Wong, and Nick Yu

Title :

Soft Error Study with DDR4 SDRAMs Using 480 MeV Proton Beam

Appears in :

Poster, IEEE International Reliability Physics Symposium (IRPS), Apr. 2017

Supporter(s) :

31.

Author(s) :

Sanghyeon Baeg, Seungjae Jeong, Gunasekaran Ramasamy, Nelson hua, and Young Lee

Title :

HBM Memory Fault Grading and Results

Appears in :

Poster, IEEE International Test Conference(ITC), Nov. 2016

Supporter(s) :

Cisco Systems Inc., Coolmem

30.

Author(s) :

Geunyong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, and Charlie Slayman

Title :

Logic Soft Error Study with 800-MHz DDR3 SDRAMs in 3x nm Using Proton and Neutron Beams

Appears in :

IEEE International Reliability Physics Symposium (IRPS), Apr. 2015

Supporter(s) :

-

29.

Author(s) :

Kyungbae Park, Sanghyeon Baeg, Shijie Wen, and Richard Wong

Title :

Active-Precharge Hammering on a Row Induced Failure in DDR3 SDRAMs under 3x nm Technology

Appears in :

IEEE International Reliability Workshop, Oct, 2014.

Supporter(s) :

NRF and BK21+

28.

Author(s) :

K. Lilja, H.-B. Wang, M. Bounasser, N. Mahatme, S.-J. Wen, R. Wong, R. Fung, Sanghyeon Baeg, B. Bhuva, and L. Chen

Title :

Voltage Dependence of Single Event Error Rates for Flip-Flops in Advanced Technologies - from Nominal to Near Threshold

Appears in :

Single Event Effects(SEE) Symposium and Military and Aerospace Programmable Logic Devices(MAPLD) Workshop, May. 2014.

Supporter(s) :

-

27.	Author(s) :	H.-B. Wang, Li Chen, K. Lilja, M. Bounasser, N. Mahatme, B. Bhuva, S.-J. Wen, R. Wong, R. Fung, and Sanghyeon Baeg
	Title :	Impact of Well Ties on Single Event Transient Width
	Appears in :	Single Event Effects(SEE) Symposium and Military and Aerospace Programmable Logic Devices(MAPLD) Workshop, May. 2014.
	Supporter(s) :	-

26.	Author(s) :	Sanghyeon Baeg
	Title :	MCU Effects on SER Modeling with Memory Architecture Parameters
	Appears in :	International school on the Effects on Radiation on Embedded Systems for Space Applications (SERESSA), Dec. 2012.
	Supporter(s) :	-

25.	Author(s) :	Xinli Gu and Sanghyeon Baeg
	Title :	Why Memory Test Is Still a Challenge?
	Appears in :	SEMICON China 2012, March 2012.
	Supporter(s) :	Huawei Technologies

24.	Author(s) :	Sanghyeon Baeg, S. Lee, K. Y. Park, S. Wen, and R. Wong
	Title :	High-Energy Alpha Particle SEU Measurements for Flip Chip Devices
	Appears in :	IEEE Santa Clara Valley CPMT Society Chapter Workshop, Oct. 2012.
	Supporter(s) :

23.	Author(s) :	Sanghyeon Baeg, Jongsun Bae, Soonyoung Lee, Chul Seung Lim, Sang Hoon Jeon, and Hyeonwoo Nam
	Title :	Soft Error Issues with Scaling Technologies
	Appears in :	The 21st Asian Test Symposium (ATS'12), Nov. 19-22, 2012.
	Supporter(s) :	-

22.	Author(s) :	J.A. Maestro, A. Sánchez-Macián, P. Reviriego, and Sanghyeon Baeg
	Title :	Optimizing the Protection of Narrow Values in Memories Protected with Hamming Codes
	Appears in :	Proc. of the conference on Radiation and its Effects on Components and Systems (RADECS), Biarritz (France), Sep. 2012.
	Supporter(s) :	-

21.	Author(s) :	Sanghyeon Baeg, Pierre Chia, ShiJie Wen, and Richard Wong
	Title :	DRAM Failure Cases Under Hot-Carrier Injection
	Appears in :	Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-3, July 2011.
	Supporter(s) :	GRRC

20.	Author(s) :	Reviriego, P., Maestro, J.A., and Sanghyeon Baeg
	Title :	Designing Ad-Hoc Scrubbing Sequences to Improve Memory Reliability against Soft Errors
	Appears in :	Design Automation Conference (DAC), pp. 700-705, June 2011.
	Supporter(s) :	-

19.	Author(s) :	Sanghyeon Baeg, Hyeonwoo Nam, ShiJie Wen and Richard Wong
	Title :	AC-DC Factor Sensitivity for DRAM Components Lifetime under Hot-Carrier Injection
	Appears in :	Reliability Physics Symposium (IRPS), pp. 2D.1.1-1.4, April 2011.
	Supporter(s) :	GRRC

18.	Author(s) :	Syed Mohsin Abbas, Sanghyeon Baeg and Sungju Park
	Title :	Multiple Cell Upsets Tolerant Content-Addressable Memory
	Appears in :	Reliability Physics Symposium (IRPS), pp. SE.1.1-1.5, April 2011
	Supporter(s) :	GRRC

17.	Author(s) :	Changmin Jung, Sanghyeon Baeg, ShiJie Wen, and Richard Wong
	Title :	Design Method of NOR-Type Comparison Circuit in CAM with Ground Bounce Noise Considerations
	Appears in :	International Symposium on Quality Electronic Design (ISQED), pp. 1-8, March 2011
	Supporter(s) :	GRRC

16.	Author(s) :	C.-F. Chia, S.-J. Wen, and Sanghyeon Baeg
	Title :	New DRAM HCI Qualification Method Emphasizing on Repeated Memory Access
	Appears in :	IEEE International Integrated Reliability Workshop (IIRW), pp. 142-144, Oct. 2010
	Supporter(s) :	-

15.	Author(s) :	Zahid Ullah and Sanghyeon Baeg
	Title :	Vertically Partitioned SRAM-based Ternary Content Addressable Memory
	Appears in :	IEEE International Conference on Intelligence and Information Technology(ICIIT 2010), Oct. 2010
	Supporter(s) :	GRRC

14.	Author(s) :	Jongsun Bae, Sanghyeon Baeg, Shi-Jie Wen, and Richard Wong
	Title :	SRAM Cell Reliability Degradations due to Cell Crosstalk
	Appears in :	IEEE International Integrated Reliability Workshop (IIRW), pp. 129-132, Oct. 2010
	Supporter(s) :	GRRC

13.	Author(s) :	Soonyoung Lee, Sanghyeon Baeg, and Pedro Reviriego
	Title :	Memory Reliability Model for Accumulated and Clustered Soft Errors
	Appears in :	IEEE International Integrated Reliability Workshop (IIRW), pp. 114-117, Oct. 2010
	Supporter(s) :	GRRC

12.	Author(s) :	Pedro Reviriego, Juan Antonio Maestro, Sanghyeon Baeg, Shijie Wen and Richard Wong
	Title :	Selection of the Optimal Interleaving Distance for Memories Suffering MCUs
	Appears in :	Proc. of the conference on Radiation and its Effects on Components and Systems (RADECS), Sep. 2009.
	Supporter(s) :	GRRC

11.	Author(s) :	Sanghyeon Baeg, Pedro Reviriego, Juan Antonio Maestro, ShiJie Wen, and Richard Wong
	Title :	Analysis of a Multiple Cell Upset Failure Model for Memories
	Appears in :	SELSE 5 Workshop - Silicon Errors in Logic - System Effects, March 2009.
	Supporter(s) :	ITRC

10.	Author(s) :	Hyo-deok Shin, Sang-wook Ahn, Tae-hoon Song, and Sanghyeon Baeg
	Title :	Analysis of Low Power Sensor Node Using Data Compression
	Appears in :	8th IFAC International Conference on Fieldbuses and Networks in industrial and embedded systems (FeT), pp. 34-39, May 2009.
	Supporter(s) :	GRRC

9.	Author(s) :	Sanghyeon Baeg, ShiJie Wen, and Richard Wong
	Title :	SRAM Interleaving Distance Selection with a Soft Error Failure Model
	Appears in :	Proc. of the conference on Radiation and its Effects on Components and Systems (RADECS), Sep. 2008.
	Supporter(s) :	ITRC

8.	Author(s) :	Luis Boluna, Kelvin Qiu, Ehsan Kabir, Susmita Mutsuddy, Daniel Ho, and Sanghyeon Baeg
	Title :	Advances in 7.5Gb/s SerDes Modeling using IBISv4.2(VHDL-AMS and Verilog-AMS)
	Appears in :	IBIS Summit Meeting, Santa Clara, CA., U.S.A, Feb 7, 2008
	Supporter(s) :	-

7.	Author(s) :	H. Jun, S. Chung, and Sanghyeon Baeg
	Title :	Removing JTAG Bottleneck in System Interconnect Test
	Appears in :	Proc. Int’l Test Conf. (ITC), pp. 173-180, Oct. 2004
	Supporter(s) :	-

6.	Author(s) :	S. Chung and Sanghyeon Baeg
	Title :	AC-JTAG: Empowering JTAG beyond Testing DC Nets
	Appears in :	Proc. Int’l Test Conf. (ITC), pp. 30-37, 2001
	Supporter(s) :	-

5.	Author(s) :	Sanghyeon Baeg, H.R. Kim, C.H. Cho, and H.C. Kim
	Title :	Embedded Memory BIST of Serial Test Vector Generation, Serial Output Comparison
	Appears in :	Second International Test Synthesis Workshop, May 1995.
	Supporter(s) :	-

4.	Author(s) :	Sanghyeon Baeg and William A. Rogers
	Title :	Hybrid Design For Testability Combining Scan and Clock Line Control and Method For Test Generation
	Appears in :	Proc. Int’l Test Conf. (ITC), pp. 340-349, Oct. 1994
	Supporter(s) :	-

3.	Author(s) :	Sanghyeon Baeg and William A. Rogers
	Title :	A New Test Generation Methodology Using Selective Clocking for the Clock Line Controlled Circuits
	Appears in :	IEEE International Conference on Computer Design: VLSI in Computers and Processors, pp. 354-358, Oct. 1994
	Supporter(s) :	-

2.	Author(s) :	Sanghyeon Baeg and William A. Rogers
	Title :	Enhancing Temporal Testability and Its Effects on Design and Test Generation
	Appears in :	Proc. in International Workshop on The Economics of Design, Test and Manufacturing, May 1994
	Supporter(s) :	-

1.	Author(s) :	Sanghyeon Baeg and William A. Rogers
	Title :	A New Design For Testability Method : Clock Line Control Design
	Appears in :	Proc. of the IEEE Custom Integrated Circuits Conference, pp. 26.2.1-26.2.4, May 1993
	Supporter(s) :	-

Domestic Journals

7.	Author(s) :	Nosheen Shahzadi, and Sanghyeon Baeg
	Title :	Quantification of substrate current caused by an individual trap at different locations and energies, prevailing on Si/SiO2 interface or Si substrate of n-MOSFETs
	Submitted to :	JSTS(Journal of Semiconductor Technology Science), vol. 22, no. 4, pp. 234-243, Jul. 2022, doi: 10.5573/JSTS.2022.22.4.234
	Supporter(s) :	NRF (2020R1H1A2103043), KIAT and MOTIE (P0012451)

6.	Author(s) :	Kiseok Lee, Tan Li, and Sanghyeon Baeg
	Title :	Experimental Exploitation of Random and Deterministic Data Patterns for Stringent DDR4 I/O Timing Margins
	Submitted to :	Journal of Semiconductor Technology and Science (JSTS), vol. 19, no. 4, pp. 388-395, Aug. 2019
	Supporter(s) :	MOTIE and KSRC (10052875) and NRF (2017R1A2B2002325)

5.	Author(s) :	Sangwook Ahn, Changmin Jung, Chulseung Lim, Soonyoung Lee, and Sanghyeon Baeg
	Title :	Clocked Low Power Rail-to-Rail Sense Amplifier for Ternary Content Addressable Memory (TCAM) Application
	Appears in :	Journal of the IEEK-SD, vol. 49, no. 2, pp. 39-46, 2012
	Supporter(s) :	GRRC

4.	Author(s) :	Soonyoung Lee and Sanghyeon Baeg
	Title :	Introduction of Soft Errors in Semiconductor Memories
	Appears in :	The Magazine of the ISTK, vol. 2, no. 4, pp. 208-213, 2010
	Supporter(s) :	GRRC

3.	Author(s) :	Sang-Nam Jeong and Sanghyeon Baeg
	Title :	Analysis Simultaneously Switching Density Using Ring Oscillator
	Appears in :	Journal of the IEEK-SD, vol. 45, no. 9, pp. 79-84, Sep. 2008
	Supporter(s) :	GRRC

2.	Author(s) :	J. Oh, M. Kim, and S. Baeg
	Title :	AC Coupling Capacitor Test using Hysteresis Buffer
	Appears in :	The Magazine of the ISTK, vol. 1, no. 2, pp. 130-136, 2008
	Supporter(s) :	-

1.	Author(s) :	M. Kim and S. Baeg
	Title :	Characteristic and Performance of AC-Coupled Channel
	Appears in :	The Magazine of the ISTK, vol. 1, no. 3, pp. 189-195, 2008
	Supporter(s) :	-

Domestic Conferences

30.

Author(s) :

Jeonghwan Kim, and Sanghyeon Baeg

Title :

시스템 레벨에서의 DDR4의 컴포넌트 취약성 비교에 따른 Row Hammer 고찰

Appears in :

2020 Korea Test Conference, Oct. 2020

Supporter(s) :

29.

Author(s) :

Junhyeong Kwon, and Sanghyeon Baeg

Title :

Variation of I/O Margin According to the High Temperature Operating Experiment of DDR4 DIMM

Appears in :

2019 Korea Test Conference, Jun. 2019

Supporter(s) :

28.

Author(s) :

Youngbin Chang and Sanghyeon Baeg

Title :

Micro-probing을 통한 DC 측정 방법에 대한 고찰

Appears in :

2018 Korea Test Conference, Jun. 2018

Supporter(s) :

27.

Author(s) :

Junhyeong Kwon, and Sanghyeon Baeg

Title :

Change of I/O margin according to data pattern in DDR4 DIMM

Appears in :

2018 Korea Test Conference, Jun. 2018

Supporter(s) :

26.

Author(s) :

Kiseok Lee, and Sanghyeon Baeg

Title :

DDR4 SRAM에서 DQS에 따른 I/O 마진 값의 변화

Appears in :

2017 Korea Test Conference, Jun. 2017

Supporter(s) :

25.

Author(s) :

Shin-woo Noh, and Sanghyeon Baeg

Title :

TSV-Microbump 간에 발생하는 Open Defect의 모델링에 대한 고찰

Appears in :

2017 Korea Test Conference, Jun. 2017

Supporter(s) :

23.

Author(s) :

SeHyuck Wi, Junhyeong Kwon, and Sanghyeon Baeg

Title :

Data Margin impact of the 800Mhz DDR3 DIMM pad wear

Appears in :

2016 Korea Test Conference, Jun. 2016

Supporter(s) :

22.

Author(s) :

Sin-woo Noh, Hosung Lee, and Sanghyeon Baeg

Title :

TSV Pin-hole Test Method using DC Voltage

Appears in :

2016 Korea Test Conference, Jun. 2016

Supporter(s) :

21.

Author(s) :

Donghyuk Yun, Kyungbae Park, Geunyong Bak, and Sanghyeon Baeg

Title :

Retention Test of DIMM Module by Local Heating

Appears in :

2015 Korea Test Conference, Sep. 2015

Supporter(s) :

GRRC and NIPA

20.

Author(s) :

Muhammad Waqar, Hosung Lee, Geunyong Bak, Saqib Ali Khan, and Sanghyeon Baeg

Title :

DIMM Press-fit Socket Pin Seating Position Effect on Socket to System Board Interconnect

Appears in :

2015 Korea Test Conference, Sep. 2015

Supporter(s) :

GRRC and NIPA

19.

Author(s) :

Hosung Lee and Sanghyeon Baeg

Title :

An Indirect Diagnosis of VTT Power Rail Defect in DDR3 Memory System by Using Intensive Address Switching Test Algorithms

Appears in :

2015 Korea Test Conference, Sep. 2015

Supporter(s) :

GRRC and NIPA

18.

Author(s) :

Chulseung Lim, Geunyong Bak, Kyungbae Park, and Sanghyeon Baeg

Title :

Retention Time Test on Heavy Ion-Induced SDRAM Devices

Appears in :

2015 The Institute of Electronics and Information Engineers Conference, June 2015

Supporter(s) :

GRRC

17.

Author(s) :

Hosung Lee and Sanghyeon Baeg

Title :

A Case Study of JTAG Interface Connection Failure in FPGA System Caused by SMT Defect

Appears in :

2014 Korea Test Conference, June 2014

Supporter(s) :

GRRC

16.

Author(s) :

Kiseok Lee, SeungJae Jeong, Kyungbae Park, and Sanghyeon Baeg

Title :

Substitutive model of the sense amplifier dynamic 2-cell incorrect read fault of type 1

Appears in :

2013 Korea Test Conference, June 2013

Supporter(s) :

-

15.	Author(s) :	Hyeonwoo Nam and Sanghyeon Baeg
	Title :	DRAM Word Line Driver Circuit Operation by Hot Carrier Injection
	Appears in :	2012 Korea Test Conference, June 2012
	Supporter(s) :	GRRC and IPC

14.	Author(s) :	SeungJae Jeong and Sanghyeon Baeg
	Title :	March C- using address rotation for detecting Delay Coupling Fault
	Appears in :	2012 Korea Test Conference, June 2012, (Best Paper Award)
	Supporter(s) :	Huawei Technologies

13.	Author(s) :	Soonyoung Lee, Hyeonwoo Nam, and Sanghyeon Baeg
	Title :	면적 효율과 고-해상도의 후-보정이 가능한 CMOS 버니어 딜레이 라인 셀 디자인
	Appears in :	제19회 한국반도체학술대회, 2012
	Supporter(s) :	GRRC and IDEC

12.	Author(s) :	Ilgon Kim and Sanghyeon Baeg
	Title :	Implementation of 8051 8-bit Processor with Variable Pipeline Stages
	Appears in :	2010 ISOCC Chip Design Contest, Nov. 2010
	Supporter(s) :	-

11.	Author(s) :	Jongsun Bae and Sanghyeon Baeg
	Title :	Analysis of VDDmin Shift by Mixed Gate Oxide Breakdown and NBTI in SRAM
	Appears in :	The 11th Korean Test Conference, June 2010
	Supporter(s) :	GRRC

10.	Author(s) :	Soonyoung Lee, Sikandar Z. Khan, Sangwook Ahn, and Sanghyeon Baeg
	Title :	Design of Area Efficient High Resolution CMOS Vernier Delay Line Cell
	Appears in :	ieek Conference, 2010
	Supporter(s) :	GRRC

9.	Author(s) :	Sungmin Oh and Sanghyeon Baeg
	Title :	Power Saving Model with the Conversion of Parallel Interface to Serial Interface
	Appears in :	SoC Conference at Inha University, May 2010
	Supporter(s) :	ETRI

8.	Author(s) :	Jae Doo Jung and Sanghyeon Baeg
	Title :	Ground Pin Removal Method Implementations for Delay Test in Probe Card Environment
	Appears in :	The 10th Korea Test Conference, 2009
	Supporter(s) :	GRRC

7.	Author(s) :	JungKyun Oh, Minsuk Kim, and Sanghyeon Baeg
	Title :	AC Coupling Capacitor Test using Hysteresis Buffer
	Appears in :	The 9th Korea Test Conference, 2008
	Supporter(s) :	GRRC

6.	Author(s) :	Changmin Jung and Sanghyeon Baeg
	Title :	Ground bounce effects on the Devices under NBTI stress
	Appears in :	The 15th Korean Conference on Semiconductors, 2008
	Supporter(s) :	GRRC

5.	Author(s) :	Taewon Choi and Sanghyeon Baeg
	Title :	Ground Bounce Analysis in Impact of NBTI on SRAM Cell
	Appears in :	The 8th Korea Test Conference, 2007
	Supporter(s) :	GRRC and IT-SoC

4.	Author(s) :	Jongsun Bae and Sanghyeon Baeg
	Title :	Analysis of AC Coupling Defect for SRAM Cell
	Appears in :	The 8th Korea Test Conference, 2007
	Supporter(s) :	GRRC and IT-SoC

3.	Author(s) :	Taewon Choi, KyoungBae Park, Jongsun Bae, Sangnam Jung and Sanghyeon Baeg
	Title :	Ternary CAM IP Design Using 0.18-um CMOS Technology
	Appears in :	The Korean Conference on Semiconductors, 2007 (Best Design Award)
	Supporter(s) :	-

2.	Author(s) :	KyoungBae Park and Sanghyeon Baeg
	Title :	di/dt Analysis Based on Layout Driven Current Path Modeling of CAM Match- line
	Appears in :	The Korean Conference on Semiconductors, 2007
	Supporter(s) :	-

1.	Author(s) :	Jongsun Bae and Sanghyeon Baeg
	Title :	Analysis and Detection Capacitive Crosstalk Defects Between Memory Cells
	Appears in :	The 7th Korea Test Conference, pp. 157-162, June 2006 (Best Paper Award)
	Supporter(s) :	IT-SoC

Presentation

18. 백상현, "어보브반도체 기술회의", 어보브반도체, Aug. 11, 2022.

17. 백상현, "Radiation-Induced Soft Errors in DRAMs", 제11회 한일 공동 여름학교(양성자과학연구단 주관) , Aug. 3, 2022

16. 백상현, "방사선에 의한 소프트에러", 삼성종합기술원, Jun. 23, 2022

15. 백상현, "우주환경 DRAM 부품의 영향", 부품연구원, Apr. 6, 2022

14. 백상현, "양성자를 이용한 DRAM 에서의 SEE 방사선 영향 평가", 양성자 과학단, Mar. 23, 2022

13. 백상현, 박명상, 전상훈, "4차 산업혁명을 위한 영구적 자가 발전기능 소형 센서", 알키미스트 프로젝트 대국민 아이디어 공모전 (최우수상), Dec. 13, 2019

12. 백상현, "대기권 대역 자연 방사선에 의한 반도체 및 전자 시스템 영향", 극지연구소, Apr. 2019

11. Sanghyeon Baeg, "Logic Errors in DDR4 SDRAM Using Proton Beam", Xi'an Jiaotong University, Oct. 2019

10. Sanghyeon Baeg, "Weakening Retention and Hammering Functions by Radiating DDR4/DDR3 Components", CRC Research Talk, March, 2019

9. Sanghyeon Baeg, "Logic Errors in DDR4 SDRAM Using Proton Beam", Jilin University, Dec. 2018

8. Sanghyeon Baeg, "Radiation Effects and Trends in DRAMs", Automotive Semiconductor Safety Innovation Conference(ASSIC) Korea 2018, Sep. 11, 2018

7. Sanghyeon Baeg, "Row-hammer characteristics in hardware perspective", Systems & Platform Security PI Summit at Cisco Systems Inc. Dec. 7, 2017

6. 백상현, "Soft Error in Semiconductor", Seminar at SK Hynix, July, 2017

5. 백상현, "Seminar for Samsung Electronics", Seminar at Samsung, Dec. 2016

4. 백상현, "Test Correlation at Chip Level & System Level", WRTLT'14(The Fifteenth Workshop on RTL and High Level Testing), Nov. 20, 2014

3. Sang H. Baag, Seungjae Jeong, Kiseok Lee and Xinli Gu, "Metrics Development of Characterizing Test Algorithms Activity in Relation to Physical Memory Structure", China Semiconductor Technology Internation Conference (CSTIC) 2014, March 16-17, 2014

2. 정성수, "SiP and Future of Semiconductor Test", 제 15회 한국테스트학술대회 튜토리얼, Jun. 25, 2014

1. 백상현, "반도체 테스트 동향 및 이슈", 반도체 콜로키움 (반도체 package, test 기술 및 산업 전망), Apr. 3, 2013

IEEE Standard

54 Members including S. Baeg, “1149.6 IEEE Standard for Boundary-Scan Testing of Advanced Digital Network”, IEEE Press, April 2003

Books

3. Interconnect Tests Issues and Strategies, total of 147 pages, Sanghyeon Baeg, 2006, IT-Soc, Korea

2. CMOS IP Design, total of 73 pages, Sanghyeon Baeg, 2006, IDEC, Korea

1. UNIX System V Guide Book, total of 655 pages, Sanghyeon Baeg, Kidari Press, 1991, Korea

U.S.A Patents

12. Chung Sung Soo, Baeg Sang Hyeon, “AC coupled line testing using boundary scan test methodology”, 09/11/2007, USA Patent No. : 7,174,492

11. S. Baeg, and S. Chung, “Test buffer design and interface mechanism for differential receiver AC/DC boundary scan test”, Aug. 8, 2006, USA Patent Number : 7089463

10. S. Baeg, S. Chung, and H. Jun, “Programmable test pattern and capture mechanism for boundary scan”, Aug. 8, 2006, USA Patent Number : 7089470

9. Baeg Sanghyeon , Yu Edward, “Clock generation for testing of integrated circuits”,09/08/1998, USA Patent Number : 5805608

8. Qureshi Amjad , Baeg Sanghyeon, “Structure and Method for SDRAM dynamic self refresh entry and exit using JTAG”, 08/11/1998, USA Patent Number : 5793776

7. Baeg Sanghyeon, “Low cost emulation scheme implemented via clock control JTAG controller in a scan environment”, 09/22/1998, USA Patent Number : 5812562

6. Baeg SangHyeon, Rogers William A., “Integrated circuit having clock-line control and method for testing same”, May 21, 1996, USA Patent Number : 5519713

5. Qureshi Amjad, Baeg Sanghyeon, “Adaptable scan chains for debugging and manufacturing test purposes”, 08/11/1998, USA Patent Number : 5793776

4. Kim Heon-cheol, Kim Ho-ryong, Baeg Sang-hyeon, Cho Chang-hyun, “A method of testing single-order address memory”, 01/06/1998, USA Patent Number : 5706293

3. Baeg Sang-hyeon, Lee Seong-won, “Test circuits and methods for built-in testing integrated devices”, 02/01/2000, USA Patent Number : 6019502

2. Baeg Sang-hyeon, Kim Heon-cheol, Kim Ho-royng, Cho Chang-hyun, “Serial memory interface using interlaced scan”, 05/19/1998, USA Patent Number : 5754758

1. Baeg Sanghyeon, Yi Dongsoon, “Self-test circuit and method utilizing interlaced scanning for testing a semiconductor memory device”, June 29, 1999, USA Patent Number : 5917832

PCT Patents

2. Sanghyeon Baeg, Zahid Ullah, "SRAM BASED ADDRESS GENERATOR FOR EACH LAYER AND ADDRESS GENERATOR INCLUDING THE SAME ", IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Publication Number: WO11/071273, Application Number: PCT/KR10/08595 (2010.12.02)

1. BAEG, Sang-Hyeon, "METHOD OF TESTING SEMICONDUCTOR DEVICE," INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY, Publication Number: WO10/055964, Application Number: PCT/KR08/06757 (2008.11.17)

Domestic Patents

17. 백상현, 윤동혁 "행 해머링을 이용한 DRAM의 성능 분석 방법 및 오류 검출 방법", 한양대학교 산학협력단출원, 출원번호: 10-2021-0061473, 출원일: 2021.05.12

16. 백상현, 장영빈 "레퍼런스 관통 전극을 이용하여 고장 진단하는 인터커넥션 고장 진단 장치 및 그 방법", 한양대학교 산학협력단출원, 출원번호: 10-2019-0160685, 출원일: 2019.12.05

15. 백상현, 알리아메드 "비트 수를 증가시킨 SRAM 기반 TCAM의 동작 방법 및 시스템", 한양대학교 산학협력단출원, 출원번호: 10-2015-0134450, 출원일: 2015.09.23

14. 백상현, 임철승 "반도체 메모리 장치의 프리차지 제어 회로 및 방법", 한양대학교 산학협력단출원, 출원번호: 10-2015-0073970, 출원일: 2015.05.27, 등록번호: 10-1725636, 등록일자: 2017.04.04

13. 백상현, 정성수 "리페어 가능한 관통 전극을 갖는 반도체 장치", 한양대학교 산학협력단출원, 출원번호: 10-2014-0069928, 출원일: 2014.06.10 (정보통신산업진흥원(대전사무소))

12. 백상현, 정현수 "극저온 냉매를 이용한 국부적 저온 챔버", 한양대학교 산학협력단출원, 출원번호: 10-2014-0026785, 출원일: 2014.03.06 ((재)한국연구재단 지원)

11. 백상현, 이호성 "이중 인라인 메모리 모듈 및 테스트 소켓을 이용한 고속 메모리 콤포넌트 테스트 시스템 및 장치",한양대학교 산학협력단출원, 출원번호: 10-2013-0032708, 출원일: 2013.3.27, 등록번호: 10-141010100000,등록일자: 2014.06.13 (GRRC 7차년도 지원)

10. 백상현, 남현우 "드라이아이스를 이용한 국부적 저온 챔버 개발",한양대학교 산학협력단출원, 출원번호: 10-2012-0149884, 출원일: 2012.12.20 (GRRC 7차년도 지원)

9. 백상현, 울라자히드, "SRAM 기반의 계층별주소 생성장치 및그를 포함하는주소 생성장치 (SRAM based address generator for each layer and address generator comprising the same)," 한양대학교산학협력단 출원, 출원번호: 10-2009-0121318, 출원일자: 2009.12.08, 등록번호: 10-1074495, 등록일자: 2011.10.11, (지식경제부 ITRC사업실적)

8. 백상현, 안상욱, 배종선, 신효덕, "레일투레일 저전력전압 센스증폭기", 한양대학교산학협력단 출원,출원번호: 10-2008-0130513, 출원일: 2008.12.19, 등록번호: 10-1061634, 등록일: 2011년 8월26일 (지식경제부ITRC사업 지원)

7. 백상현, "이벤트시간 측정방법 및회로", 한양대학교산학협력단 출원, 출원번호: 10-2010-0049204, 출원일: 2010.05.26, 등록번호: 10-1061634 등록일: 2011.07.25, (GRRC 6차년도 지원실적(등록))

6. 백상현, "반도체소자의 테스트방법(파워/그라운드핀 제거테스트 방법)", 한양대학교 산학협력단출원, 출원번호: 2008-0113772, 출원일: 2008.11.17, 등록번호: 10-1002102, 등록일: 2010년12월 10일(GRRC 5차년도 실적(등록))

5. 백상현, 배종선, "반도체 메모리장치 및그것의 테스트방법," 한국전자통신연구원, 한양대학교 산학협력단공동출원, 출원번호: 2007-0083963, 출원일: 2007.08.21, 등록번호: 10-0919819, 등록일: 2009.09.24 (IT-SoC 설계실습프로젝트실적(출원))

4. 백상현, 배종선, "단위셀 간의연결고장 테스트를위한 반도체메모리 장치및 테스트방법"(SEMICONDUCTOR MEMORY DEVICE FOR TESTING CAPACITIVE CROSSTALK DEFECTS BETWEEN UNIT CELLS AND TEST METHOD THEREIN);, 한국전자통신연구원, 한양대학교 산학협력단, 출원번호: 2007-0071751, 출원일: 2007.07.18, 등록번호: 10-0919819-0000, 등록일: 2009.02.19

3. 백상현, "메모리폴트 시뮬레이션응용에서 시간고려고장 모델및 물리적구조 기술", 한양대학교 산학협력단출원, 출원번호: 10-2011-0021822, 출원일: 2011.03.11

2. 백상현, 박성주, 사이드모흐신, "내용주소화 메모리의다중 셀고장을 허용하기위한 방법및 장치", 한양대학교 산학협력단출원, 출원번호: 10-2010-0120903, 출원일: 2010.11.30

1. 백상현, "반도체소자의 테스트방법 및이를 위한노이즈 발생방법(di/dt)", 한양대학교 산학협력단출원, 출원번호: 10-2010-0045553, 출원일: 2010.05.14 (GRRC 실적)

Software License

백상현, 이순영, "메모리 비트맵 뷰어", 한양대학교 산학협력단, 2009/11/25, 등록번호 2009-01-121-006532